News Releases

August 22, 2012

For longer smartphone battery New Power CSP MOSFET in the market
High thermal yet the smallest size utilizing new package technology

Osaka, Japan – Industrials Devices Company,Panasonic Corporation has developed the New Power CSP MOSFET[1] semiconductor.
High power density and better efficiency are constantly required by power designers. Power management applications need cost-effective solutions that minimize board space while increasing efficiency and thermal dissipation.Panasonic Corporation launched new MOSFET family utilizing a new PMCP package to help designers meet these power design challenges.
FJ3P02100L and FK3P02110L is available in October 2012 and so is FK3P03240L in March 2013.

This MOSFET family is optimized for load switches[2] that combine low RDS(on)[3] in a smaller form factor, reducing the power management system size and minimizing power consumption to increase power efficiency.
This MOSFET family is also a perfect fit for lithium ion battery applications where the low RDS(on) is a must. Using contact pads instead of pins or wires deliver the lowest RDS(on) that minimize the power dissipation and maximize the battery life.

Features

2 key features of Power Mount CSP:

- Panasonic’s unique Power Mount CSP package allows for improved thermal dissipation by 5% while reducing the size by 80% over the conventional solutions.

Package size and thermal dissipation are directly proportional. As the package size decreases, the thermal dissipation also decreases. With the industry's first ultra-small PMCP package with high thermal capability, this new power MOSFET has reduced the size by 46%*1, become thinner by 67%*1 while improving the thermal dissipation capability by 5%*1, that leads to high-density mounting and miniaturizing power circuits.

- Employing a fine trench silicon technology that provides 47% lower RDS(on) over the same sized conventional chip. By using this technology, this MOSFET family achieves higher power efficiency while reducing power consumption of the system.

A power MOSFET, which switches a current on and off by controlling the gate voltage, encounters resistance while current flows through it. In order to increase the current, lower resistance is required. In addition, the value of the resistance varies with the size of the cell. Therefore, we have reduced the resistance (RDS(on)) by 47%*1 over the same sized conventional chip. The power loss has been reduced when current flows through MOSFET significantly, thus achieving longer battery life and power savings.

New technology

The performance of this MOSFET family is the result of 2 major technology advances:

- Adopting a new heat discharging frame structure
PMCP utilizes the new package structure of unique pad design and drain clip technology, which achieves higher thermal performance over the current Panasonic MOSFET SK8403080L.

Our thermal design utilizes a frame structure to optimize thermal dissipation from the chip to both the PCB and air; a higher thermal dissipation over our conventional product has been achieved while achieving small size and low-profile.

- 110nm fine trench cell with wafer thinning fabrication technology
Panasonic’s advances in cell technology and wafer thinning fabrication have lead to silicon with lower specific on resistance.

Normally, in an N-ch power MOSFET, current flows from the substrate to the channel. Increasing the number of cells by using a 110nm fine process technology reduces the resistance of the channel. In addition, using wafer thinning technology reduces the resistance of the substrate. Consequently, we have reduced the RDS(on) by 47%*1 versus the conventional solutions.

Market Trend

In recent years, the requirement for energy efficient and long lasting portable devices has lead to the use of more MOSFETS for power management switches.
Power management systems require minimized board space while increasing part counts and therefore require smaller but higher power efficient MOSFETs.

Schedule

MP products: October 2012
Samples: Please contact your local sales office

[Provisional specifications]

Part No.	FJ3P02100L	FK3P02110L	FK3P03240L
Polarity	Pch	Nch	Nch
Drain-Source voltage	-20 V	24 V	30 V
Gate-Source voltage	±8 V	±12 V	±20 V
Drain current	4.4 A	3.0 A	14 A
Drain-Source ON resistance RDS(on)	12.0 mΩ (typ.) @VGS = 2.5 V	12.5 mΩ (typ.) @VGS = 2.5 V	3.5 mΩ (typ.) @VGS = 10V
Input capacitance	3000 pF (typ.)	1500 pF (typ.)	1550 pF (typ.)
Package size (Vertical × Horizontal × Height)	2.0mm×2.0mm×0.33mm	1.8mm×1.6mm×0.33mm	2.3mm×2.5mm×0.33mm
Mass production	Oct. 2012	Oct. 2012	March 2013

[Outline view]

[Description of words]

[1] MOSFET
Metal-Oxide-Semiconductor Field-Effect Transistor, and refers to a field effect transistor using an oxide layer to isolate the gate.

[2] Load switch
A switch to control on/off of a line supplying a power to larger circuits.

[3] RDS(on)
A resistance between drain and source of MOSFET while it is in an on state.