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For longer smartphone battery life
High Thermal Dissipation Schottky Barrier Diode with Ultra-Small PMCP Package
Best suited for mobile device power management circuits
Osaka,Japan－Industrial Devices Company, Panasonic Corporation has launched the new Schottky barrier diode (SBD) utilizing our unique PMCP (Power Mount CSP) package, which features high thermal dissipation, ultra-small size, and high efficiency (low voltage loss), and is best suited for primary power circuits of smartphones, tablet PCs, and notebook PCs.
||Schottky barrier diode
||Please contact your local sales office.
|Production per month
Smartphones and other mobile devices require high-efficiency diodes that reduce power consumption to increase power efficiency resulting in a longer battery life. They also require small diodes with high thermal dissipation allowing high-density mounting of components on the PCB to make them smaller and thinner. In order to respond to such needs, Panasonic launched the high-efficiency SBD that utilizes our unique PMCP package featuring ultra-small size and high thermal dissipation.
This product series is suited for rectification in secondary rectification circuit in USB wall chargers and other power circuits.
- １. Small and low-profile yet high thermal dissipation with our unique PMCP
- <Thermal dissipation>
Junction temperature: 147°C (at a current of 1 A and ambient temperature of 25°C）
Reduced by 28%*1 （compared with conventional 203°C）
<Size> Mounting area: 1.92 mm2
Reduced by 39%*1（compared with conventional 3.13 mm2）
Thickness: 0.33 mm
Reduced by 53%*1 （compared with conventional 0.7 mm）
- Package size and thermal dissipation are directly proportional. As the package size decreases, the thermal dissipation also decreases. This PMCP SBD has been developed using a ultra-small, high thermal dissipating package structure utilizing Panasonic’s unique thermal design technology. By optimizing thermal dissipation both on the PCB and in air, this new PMCP SBD has reduced the size by 39%*1, become thinner by 53%*1 while improving the thermal dissipation capability by 28%*1, that leads to high-density mounting and miniaturizing power circuits.
- 2. Industry's lowest*2 forward voltage drop(VF)
<VF characteristic> 0.39 V (max. value at 1 A)
Reduced by 33%*1 （compared with the conventional 0.58 V product）
- In a diode, increasing the applied voltage and exceeding the VF causes a forward current (IF) to flow. Therefore, the voltage increase until reaching the VF is loss. Decreasing VF allows voltage supplied from the power source to be supplied to systems with low loss. This SBD has reduced VF by 33%*1 to the industry's lowest level by adopting a JBS structure  using 150nm process technology, thereby allowing the design of an efficient power supply.
(Vertical × Horizontal × Height)
|1.6 mm × 1.2 mm × 0.33 mm
|Reverse voltage (VR)
|Forward current (IF)
|Non-repetitive peak forward surge current (IFSM)
|Junction temperature (Tj)
|Forward voltage (VF)
||0.39 V (max. value at 1 A)
|Reverse current (IR)
[Descriptions of words]
-  Schottky Barrier Diode (SBD)
- A semiconductor diode that is based on a metal-semiconductor junction rather than
a p–n junction, which reduces capacitance and increases switching speed..
When current flows through a diode there is a small voltage drop across the diode terminals (Anode and Cathode).
A Schottky diode voltage drop is between approximately 0.15–0.45 volts. This lower voltage drop can provide higher switching speed and better system efficiency.
-  ＰＭＣＰ （Power Mount CSP [Chip Size Package]）
- Panasonic's has a unique ultra-small package featuring high thermal dissipation, utilizing an optimized lead frame design with no resin seal.
-  Junction temperature (Tj)
- Junction temperature is the actual die or device temperature.
-  Forward Voltage (VF)
- A voltage drop when a current flows from anode (+) to cathode (-) on a diode.
-  Forward Current (IF)
- A current flowing from anode (+) to cathode (-) on a diode.
-  JBS (Junction Barrier Schottky) structure
- The JBS structure combines a Schottky and PiN diode structure making use of the advantage of both types; Schottky-like on-state and switching characteristics with PiN-like blocking characteristics.
The JBS diodes show smaller leakage current than the Schottky dioes as they have PN junction blocking mechanisms.
-  150nm process technology
- A semiconductor fabrication technology with a minimum line width of 150 nm
The content in the following news releases is accurate at the time of publication but may be subject to change without notice.
Please note therefore that these documents may not always contain the most up-to-date information.
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